TSMC's 2nm process has made a major breakthrough! Trial production in 2023
Source: Fast Technology
In the past few years, TSMC, the No. 1 foundry of Tianzi, has been making progress in the development of new processes. The 7nm process is fully popularized, the 5nm process is leading all the way, the 3nm process is close at hand, and the 2nm process is also advancing rapidly.
According to the latest report, TSMC has made a major internal breakthrough in the 2nm process. Although the details have not been disclosed, it is optimistic that it is expected that the 2nm process is expected to undergo risky trial production in the second half of 2023, and it will be able to enter the volume in 2024. Production stage.
TSMC also stated that the 2nm breakthrough will once again widen the gap with competitors, while continuing Moore's Law and continuing to advance the research and development of the 1nm process.
TSMC predicts that Apple, Qualcomm, NVIDIA, AMD and other customers are expected to take the lead in adopting its 2nm process.
On the 2nm process, TSMC will abandon the FinFET (Fin Field Effect Transistor) that has lasted for many years, and even not use the GAAFET (surround gate field effect transistor) that Samsung plans to use on the 3nm process, that is, nanowire (nanowire), but Extend it to become "MBCFET" (multi-bridge channel field effect transistor), also known as nanosheet.
From GAAFET to MBCFET, from nanowire to nanosheet, it can be seen as a leap from two-dimensional to three-dimensional, which can greatly improve circuit control and reduce leakage rate.
Of course, the cost of new processes will become more and more astronomical. Samsung has invested about 480 million US dollars in 5nm process research and development, and 3nm GAAFET will greatly exceed 500 million US dollars.