Micron's world's first 176-layer 3D flash memory
Source: Fast Technology
Micron just announced its fifth-generation 3D NAND flash memory technology, reaching a record 176-layer stack. This is also the second-generation 3D NAND flash memory independently developed by Micron and Intel after they parted ways in flash memory cooperation.
When Micron and Intel cooperated, they adopted a floating gate flash memory cell architecture. After independence, they turned to a charge-trap flash memory cell architecture. The first generation was a 128-layer stack, but it was more of a transitional nature for discovery, Solve various problems in the design of the new architecture.
Because of this, what Micron’s new 176-layer stacked flash memory replaces is actually a 96-layer stack.
It is understood that Micron’s 176-layer flash memory is actually based on the superposition of two 88 layers. The first batch is TLC particles. The capacity of a single Die is 512Gb (64GB). Of course, QLC is likely to be added later.
Thanks to the new flash memory architecture and stacking technology, Micron has compressed the thickness of 176 layers to 45 microns, which is basically the same as the early 64-layer floating gate 3D NAND.
In this way, even if 16 Dies are packaged in a single chip to achieve a single capacity of 1TB, the thickness will not exceed 1.5 mm, and it can be easily put into smart phones and memory cards.
The transmission rate is increased to 1600MT/s, while the previous 96/128 layers are all 1200MT/s. The read and write latency is improved by 35% compared to the 96 layer, 25% compared to the 128 layer, and the mixed load performance is improved by 15% compared to the 96 layer. .
Micron said that 176-layer flash memory has been mass-produced and shipped and used in some consumer SSDs under the Crucial brand. More new products will be released next year, but no specific product models have been confirmed.
Micron just announced its fifth-generation 3D NAND flash memory technology, reaching a record 176-layer stack. This is also the second-generation 3D NAND flash memory independently developed by Micron and Intel after they parted ways in flash memory cooperation.
When Micron and Intel cooperated, they adopted a floating gate flash memory cell architecture. After independence, they turned to a charge-trap flash memory cell architecture. The first generation was a 128-layer stack, but it was more of a transitional nature for discovery, Solve various problems in the design of the new architecture.
Because of this, what Micron’s new 176-layer stacked flash memory replaces is actually a 96-layer stack.
It is understood that Micron’s 176-layer flash memory is actually based on the superposition of two 88 layers. The first batch is TLC particles. The capacity of a single Die is 512Gb (64GB). Of course, QLC is likely to be added later.
Thanks to the new flash memory architecture and stacking technology, Micron has compressed the thickness of 176 layers to 45 microns, which is basically the same as the early 64-layer floating gate 3D NAND.
In this way, even if 16 Dies are packaged in a single chip to achieve a single capacity of 1TB, the thickness will not exceed 1.5 mm, and it can be easily put into smart phones and memory cards.
The transmission rate is increased to 1600MT/s, while the previous 96/128 layers are all 1200MT/s. The read and write latency is improved by 35% compared to the 96 layer, 25% compared to the 128 layer, and the mixed load performance is improved by 15% compared to the 96 layer. .
Micron said that 176-layer flash memory has been mass-produced and shipped and used in some consumer SSDs under the Crucial brand. More new products will be released next year, but no specific product models have been confirmed.
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